Title :
Giant Magnetoresistance (GMR) sensors for 0.35µm CMOS technology sub-mA current sensing
Author :
De Marcellis, Andrea ; Reig, C. ; Cubells, M.D. ; Madrenas, J. ; Cardoso, F. ; Cardoso, S. ; Freitas, P.P.
Author_Institution :
Dept. of Phys. Chem. Sci., Univ. of L´Aquila, L´Aquila, Italy
Abstract :
This paper reports on the design and fabrication of microelectronic structures for non-invasive indirect electric current sensing at the IC level. A 0.35 μm CMOS ASIC has been specifically developed for this purpose. Then, a low temperature post-process, fully compatible with the CMOS technology, has been applied for depositing Giant Magnetoresistive (GMR) sensors. Preliminary experimental results for obtaining the sensitivity of the devices are presented. The detection limit is estimated to be about 5 μA.
Keywords :
CMOS integrated circuits; application specific integrated circuits; electric current measurement; giant magnetoresistance; magnetic sensors; CMOS ASIC technology; giant magnetoresistance sensors; low temperature post-process; microelectronic structures; noninvasive indirect electric current sensing; size 0.35 mum; submA current sensing; CMOS integrated circuits; Current; Current measurement; Magnetic sensors; Resistance; ASIC; CMOS compatible; GMR; electric current sensor; integrated circuit;
Conference_Titel :
SENSORS, 2014 IEEE
Conference_Location :
Valencia
DOI :
10.1109/ICSENS.2014.6985030
