Approaching homogeneous switching of MCT devices: experiment and simulation

Author

Lendenmann, H. ; Dettmer, H. ; Krumbein, U. ; Fichtner, W. ; Bauer, F. ; Stockmeier, T.

Author_Institution

Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

1993

fDate

18-20 May 1993

Firstpage

66

Lastpage

70

Abstract

Problems in scaling the MCT (MOS-controlled thyristor) to higher turn-off currents (I_TGM) still need to be resolved. It is shown experimentally that these performance problems are related to design features occuring at the boundary of the device and at the locations of the MOS turn-on cells. The simulation of complete turn-on-turn-off cycles over a realistic time scale of an improved MCT boundary structure has also been carried out. The results reveal detailed physical insight into the mechanisms involved in the switching of the cell ensemble. It is shown that the device boundary can be improved by layout measures to yield a uniform current distribution throughout the entire turn-off of the MCT device

Keywords

current distribution; metal-insulator-semiconductor devices; semiconductor device models; semiconductor switches; switching; thyristors; MOS turn-on cells; MOS-controlled thyristor; boundary structure; design features; homogeneous switching; layout measures; performance problems; scaling; simulation; turn-on-turn-off cycles; uniform current distribution; Anodes; Current density; Current measurement; Electrons; Laboratories; MOSFETs; Plasma density; Plasma devices; Semiconductor optical amplifiers; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297109

Filename

297109