Title :
Approaching homogeneous switching of MCT devices: experiment and simulation
Author :
Lendenmann, H. ; Dettmer, H. ; Krumbein, U. ; Fichtner, W. ; Bauer, F. ; Stockmeier, T.
Author_Institution :
Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
Problems in scaling the MCT (MOS-controlled thyristor) to higher turn-off currents (ITGM) still need to be resolved. It is shown experimentally that these performance problems are related to design features occuring at the boundary of the device and at the locations of the MOS turn-on cells. The simulation of complete turn-on-turn-off cycles over a realistic time scale of an improved MCT boundary structure has also been carried out. The results reveal detailed physical insight into the mechanisms involved in the switching of the cell ensemble. It is shown that the device boundary can be improved by layout measures to yield a uniform current distribution throughout the entire turn-off of the MCT device
Keywords :
current distribution; metal-insulator-semiconductor devices; semiconductor device models; semiconductor switches; switching; thyristors; MOS turn-on cells; MOS-controlled thyristor; boundary structure; design features; homogeneous switching; layout measures; performance problems; scaling; simulation; turn-on-turn-off cycles; uniform current distribution; Anodes; Current density; Current measurement; Electrons; Laboratories; MOSFETs; Plasma density; Plasma devices; Semiconductor optical amplifiers; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297109
