DocumentCode :
1895367
Title :
Power MOSFET screening to improve field-reliability of power supplies
Author :
Shenai, Krishna
Author_Institution :
Energy Syst. Div., Argonne Nat. Lab., Argonne, IL, USA
fYear :
2013
fDate :
21-23 May 2013
Firstpage :
1
Lastpage :
3
Abstract :
The field-failures of a power converter depends on the reliability characteristics of circuit components, package and interconnect parasitics, thermal management and cooling, load characteristics, and the field operating environment, among other factors. In this paper, power supply field-reliability improvement by careful screening of power MOSFET´s is reported. A new power MOSFET screening criteria is proposed that leads to dramatic improvement in the mean-time-between-failure (MTBF) of compact computer/telecom power supplies. Using the new screening criteria, nearly an order of magnitude improvement in power supply MTBF is demonstrated.
Keywords :
power MOSFET; power convertors; semiconductor device reliability; semiconductor device testing; telecommunication power supplies; thermal management (packaging); cooling; field failures; field operating environment; interconnect parasitics; mean time between failure; power MOSFET screening; power converter; power supply MTBF; power supply field reliability improvement; telecommunication power supplies; thermal management; Integrated circuit reliability; MOSFET; Power semiconductor switches; Power supplies; Switching circuits; Power MOSFET; field-reliability; mean-time-between-failure (MTBF); power supply; screening;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energytech, 2013 IEEE
Conference_Location :
Cleveland, OH
Type :
conf
DOI :
10.1109/EnergyTech.2013.6645343
Filename :
6645343
Link To Document :
بازگشت