Title :
Coherent control of free-carrier density in GaAs
Author :
Fraser, J.M. ; Atanasov, Radoslav ; Kostoulas, Y. ; Sipe, J.E. ; van Driel, H.M.
Author_Institution :
Dept. of Phys., Toronto Univ., Ont., Canada
Abstract :
Summary form only given.Coherent control is the exploitation of interference between two or more optically excited quantum mechanical pathways to manipulate the final state of a physical system. Recently it has been used to control exciton populations in GaAs-AlGaAs quantum wells at 4 K via phase-related 805-nm 100-fs pulses and to generate electrical current in bulk GaAs at 295 K via 1.55 /spl mu/m and 0.775 /spl mu/m, 175 to 1000-fs pulses. We consider here the coherent control of electron-hole density in GaAs at 295 K via the interference of single- and two-photon band-to-band generation processes.
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; high-speed optical techniques; light coherence; quantum optics; semiconductor quantum wells; two-photon processes; 0.775 mum; 1.55 mum; 100 fs; 175 to 1000 fs; 295 K; 805 nm; GaAs; GaAs-AlGaAs; GaAs-AlGaAs quantum wells; bulk GaAs; coherent control; electrical current; electron-hole density; exciton populations control; final state; free-carrier density; optically excited quantum mechanical pathways; phase-related fs pulses; physical system; single-photon band-to-band generation processes; two-photon band-to-band generation processes; Charge carrier density; Gallium arsenide; Interference; Optical control; Optical modulation; Optical pulse generation; Optical pulses; Photonic band gap; Pulse amplifiers; Pulse modulation;
Conference_Titel :
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-541-2
DOI :
10.1109/IQEC.1998.680010
