Coherent control of free-carrier density in GaAs

Author

Fraser, J.M. ; Atanasov, Radoslav ; Kostoulas, Y. ; Sipe, J.E. ; van Driel, H.M.

Author_Institution

Dept. of Phys., Toronto Univ., Ont., Canada

fYear

1998

fDate

8-8 May 1998

Firstpage

11

Lastpage

12

Abstract

Summary form only given.Coherent control is the exploitation of interference between two or more optically excited quantum mechanical pathways to manipulate the final state of a physical system. Recently it has been used to control exciton populations in GaAs-AlGaAs quantum wells at 4 K via phase-related 805-nm 100-fs pulses and to generate electrical current in bulk GaAs at 295 K via 1.55 /spl mu/m and 0.775 /spl mu/m, 175 to 1000-fs pulses. We consider here the coherent control of electron-hole density in GaAs at 295 K via the interference of single- and two-photon band-to-band generation processes.

Keywords

III-V semiconductors; aluminium compounds; excitons; gallium arsenide; high-speed optical techniques; light coherence; quantum optics; semiconductor quantum wells; two-photon processes; 0.775 mum; 1.55 mum; 100 fs; 175 to 1000 fs; 295 K; 805 nm; GaAs; GaAs-AlGaAs; GaAs-AlGaAs quantum wells; bulk GaAs; coherent control; electrical current; electron-hole density; exciton populations control; final state; free-carrier density; optically excited quantum mechanical pathways; phase-related fs pulses; physical system; single-photon band-to-band generation processes; two-photon band-to-band generation processes; Charge carrier density; Gallium arsenide; Interference; Optical control; Optical modulation; Optical pulse generation; Optical pulses; Photonic band gap; Pulse amplifiers; Pulse modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680010

Filename

680010