Title :
Types of soft errors in DRAMs
Author_Institution :
Infineon Technol., Munich
Abstract :
Soft errors in DRAMs exhibit at least 3 different characteristics depending on the circuits that caused them. Tests and reports on DRAM soft errors must take all types of soft errors into account, and not only those from cell hits. This is evidenced by neutron beam results which also reveal different multi-bit soft errors.
Keywords :
DRAM chips; error statistics; neutron effects; DRAM; core cycle time; dynamic random access memory; multibit soft errors; neutron beam; Circuit testing; DRAM chips; Error analysis; Error correction; Ionizing radiation; Latches; Neutrons; Particle beams; Random access memory; Redundancy;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location :
Cap d´Agde
Print_ISBN :
978-0-7803-9502-2
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2005.4365591
