Title :
Wide bandgap compound semiconductors for superior high-voltage power devices
Author :
Chow, T.P. ; Tyagi, Ritu
Author_Institution :
Dept. of Electr.-Comput.-Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A critical evaluation of the performance capabilities of various wide-bandgap compound semiconductors for superior high-power and high-frequency unipolar electronic devices is presented. A wide range of semiconductors, including the III-V and II-VI compounds, various semiconducting oxides, and some pseudobinary intermetallic compounds, have been analyzed. In order to cover all possible features of power device performance, seven different figures of merit are evaluated for the various semiconductors. Besides diamond and SiC, it is found that AlN, GaN, ZnO, and the intermetallic compounds GaxIn1-x N, AlxIn1-xN, AlxGa1-xN, and (AlN)x(SiC)1-x offer significantly improved unipolar power device performance over Si
Keywords :
II-VI semiconductors; III-V semiconductors; power electronics; power transistors; semiconductor devices; semiconductor materials; (AlN)x(SiC)1-x; AlxGa1-xN; AlxIn1-xN; AlN; GaxIn1-xN; GaN; II-VI compounds; III-V compounds; SiC; ZnO; diamond; figures of merit; high-frequency unipolar electronic devices; high-voltage power devices; performance capabilities; pseudobinary intermetallic compounds; semiconducting oxides; wide-bandgap compound semiconductors; Conducting materials; Frequency; III-V semiconductor materials; Intermetallic; Photonic band gap; Semiconductivity; Semiconductor materials; Silicon carbide; Thermal conductivity; Wide band gap semiconductors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297113
