A new double epitaxial layer dielectric isolation technology for HVICs

Author

Narayanan, E. M Sankara ; Amaratunga, G. ; Milne, W.I.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

fYear

1993

fDate

18-20 May 1993

Firstpage

113

Lastpage

118

Abstract

A novel double epitaxial layer dielectric isolation (DELDI) technology suitable for high-voltage integrated circuits (HVICs) is presented. The application of the reduced surface field (RESURF) concept to enhance the breakdown voltage of a lateral double-diffused MOS (LDMOS) structure employing the DELDI technology is studied in detail. The breakdown voltage behavior of a DELDI structure is similar to that of an equivalent junction-isolated structure. The performances of various lateral power MOS controlled devices such as the LDMOS and lateral insulated gate bipolar transistors employing the DELDI technology are compared with those of their counterparts employing the conventional single layer DI technology. The performance of a lateral-emitter-switched thyristor structure using both technologies is examined. The performance of a new lateral-transistor-controlled thyristor is discussed

Keywords

SIMOX; electric breakdown of solids; insulated gate bipolar transistors; insulated gate field effect transistors; integrated circuit technology; power integrated circuits; power transistors; semiconductor epitaxial layers; thyristors; DELDI technology; SIMOX wafer; breakdown voltage; double epitaxial layer dielectric isolation technology; high-voltage integrated circuits; lateral double-diffused MOS; lateral insulated gate bipolar transistors; lateral power MOS controlled devices; lateral-emitter-switched thyristor; lateral-transistor-controlled thyristor; performances; reduced surface field; Dielectric devices; Dielectric substrates; Epitaxial layers; Insulated gate bipolar transistors; Integrated circuit technology; Isolation technology; Logic circuits; Logic devices; Thyristors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297114

Filename

297114