• DocumentCode
    1895466
  • Title

    Influence of the thickness of nanosized silicon nitride films on a stoichiometric composition

  • Author

    Mazinov, A.C. ; Bahov, V.A. ; Karavainikov, A.V.

  • Author_Institution
    Crimea Sci. Center, Ukraine MIS, Ukraine
  • fYear
    2012
  • fDate
    10-14 Sept. 2012
  • Firstpage
    695
  • Lastpage
    696
  • Abstract
    The experimental study of silicon nitride films obtained by magnetron sputtering of crystalline silicon in a mixture of argon and nitrogen is demonstrated. The changes of the intrinsic properties of protective and insulating SiN4 structures with thicknesses of 40-200 nm depending on the underlying surface and of the working thickness were shown.
  • Keywords
    dielectric thin films; mixtures; nanofabrication; nanostructured materials; silicon compounds; sputter deposition; stoichiometry; SiN4; argon mixture; crystalline silicon; insulating structures; intrinsic properties; magnetron sputtering; nanosized silicon nitride films; nitrogen mixture; protective structures; size 40 nm to 200 nm; stoichiometric composition; Atom optics; Electronic mail; Films; Reflection; Silicon; Sputtering; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-1-4673-1199-1
  • Type

    conf

  • Filename
    6336152
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1895466