Title :
Influence of the thickness of nanosized silicon nitride films on a stoichiometric composition
Author :
Mazinov, A.C. ; Bahov, V.A. ; Karavainikov, A.V.
Author_Institution :
Crimea Sci. Center, Ukraine MIS, Ukraine
Abstract :
The experimental study of silicon nitride films obtained by magnetron sputtering of crystalline silicon in a mixture of argon and nitrogen is demonstrated. The changes of the intrinsic properties of protective and insulating SiN4 structures with thicknesses of 40-200 nm depending on the underlying surface and of the working thickness were shown.
Keywords :
dielectric thin films; mixtures; nanofabrication; nanostructured materials; silicon compounds; sputter deposition; stoichiometry; SiN4; argon mixture; crystalline silicon; insulating structures; intrinsic properties; magnetron sputtering; nanosized silicon nitride films; nitrogen mixture; protective structures; size 40 nm to 200 nm; stoichiometric composition; Atom optics; Electronic mail; Films; Reflection; Silicon; Sputtering; Substrates;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
