2-GHz Si power MOSFET technology

Author

Yoshida, I.

Author_Institution

Semicond. & Integrated Circuits Div., Hitachi Ltd., Tokyo, Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

51

Lastpage

54

Abstract

A 2-GHz Si power MOSFET with 50% power-added efficiency and 1.0-W output power at a 3.6-V supply voltage has been developed for use as an RF high-power amplifier in wireless applications. This MOSFET achieves this performance by using a 0.4-/spl mu/m gate power device with an Al-shorted metal-silicide/Si gate structure and a reduced gate finger width pattern.

Keywords

MOS analogue integrated circuits; UHF field effect transistors; UHF integrated circuits; UHF power amplifiers; elemental semiconductors; integrated circuit metallisation; mobile radio; power MOSFET; power field effect transistors; semiconductor device metallisation; silicon; 0.4 micron; 1 W; 2 GHz; 3.6 V; 50 percent; Al; Al-shorted metal-silicide/Si gate structure; RF high-power amplifier; Si; Si power MOSFET technology; UHF; gate finger width pattern; wireless applications; Electrodes; High power amplifiers; MOSFET circuits; Power MOSFET; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.649453

Filename

649453