Title :
Large area MOS-gated power devices using fusible link technology
Author :
Venkatraman, Prasad ; Baliga, B.Jayant
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
An approach for improving the yield of large-area MOS-gated power devices based on wafer repair using fusible links of aluminum or polysilicon to isolate defective segments from the rest of the device is described. Unlike previously reported wafer repair techniques, the present approach does not require knowledge of the location of the fault (gate-to-source short) within the device. Work done on the development of power-MOS process compatible fusible links is described. Power MOSFETs and IGBTs (insulated-gate bipolar transistors) have been successfully fabricated using these fusible links to perform wafer repair
Keywords :
insulated gate bipolar transistors; insulated gate field effect transistors; masks; power transistors; semiconductor technology; thyristors; GTO; IGBTs; MOS controlled thyristors; MOS-gated power devices; MOSFETs; Si; fusible link technology; large-area; mask layout; polysilicon fuses; power-MOS process compatible; wafer repair; Aluminum; Control systems; Fabrication; Fuses; Insulated gate bipolar transistors; MOSFETs; Power electronics; Power engineering and energy; Power engineering computing; Testing;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297117
