DocumentCode :
1895498
Title :
The opto-electronic high-frequency transconductor and circuit applications
Author :
Vanisri, T. ; Toumazou, C.
Author_Institution :
Dept. of Telecoms, KMITL, Bangkok, Thailand
fYear :
1996
fDate :
35110
Firstpage :
42401
Lastpage :
211
Abstract :
A new hybrid design approach for high gain high frequency opto-electronic transconductors is proposed. The idea exploits the high output resistance of a p-i-n photodiode to realise a high resistance current source. Measured results on a discrete circuit implementation of a bandpass filter using laser diodes, p-i-n receivers and discrete Si JFETs demonstrates that foQ products of more than an order of magnitude higher than device process fT can be obtained. Simulated results of a similar filter employing CMOS technology for the front-end FET shows that using realistic device models filter Qs of the order of 800 can be achieved at 100 MHz. Finally a GaAs based cascode op-amp is realised using LEDs and PIN diodes to realise the opto-electronic current sources and simulations show that voltage gains of the order 80 dB with 5 GHz unity gain bandwidth products can be achieved
Keywords :
CMOS analogue integrated circuits; JFET circuits; MESFET integrated circuits; active networks; band-pass filters; circuit feedback; integrated optoelectronics; laser beam applications; light emitting diodes; operational amplifiers; p-i-n photodiodes; semiconductor lasers; 100 MHz; 5 GHz; 80 dB; CMOS technology; GaAs; GaAs based cascode op-amp; LEDs; PIN diodes; Si; bandpass filter; circuit applications; discrete Si JFETs; high gain operation; high resistance current source; high-frequency transconductor; hybrid design; laser diodes; optoelectronic HF transconductor; p-i-n photodiode; p-i-n receivers;
fLanguage :
English
Publisher :
iet
Conference_Titel :
RF Design Scene, IEE Colloquium on
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:19960170
Filename :
543431
Link To Document :
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