Title :
High Q microwave inductors in CMOS double-metal technology and its substrate bias effects for 2 GHz RF ICs application
Author :
Min Park ; Cheon Soo Kim ; Jong Moon Park ; Hyun Kyu Yu ; Kee Soo Nam
Author_Institution :
Div. of Semicond. Technol., Electron. & Telecommun. Res. Inst., Taejon, South Korea
Abstract :
This paper presents high quality factor (Q) microwave inductors (up to 20) fabricated on a high-resistivity substrate with a thick-metal layer integrated by using only CMOS double-metal interconnection technology for 2 GHz RF ICs applications. A quality factor Q of 20.1 at 3.25 GHz for 11.9 nH-inductor has been achieved. Also we report a low-loss substrate bias technique to improve the Q of the inductors.
Keywords :
CMOS integrated circuits; Q-factor; UHF integrated circuits; inductors; integrated circuit interconnections; integrated circuit metallisation; 2 to 3.5 GHz; CMOS double-metal technology; RF IC application; Si; UHF IC; high Q microwave inductors; high quality factor; high-resistivity substrate; interconnection technology; low-loss substrate bias technique; substrate bias effects; CMOS technology; Conductivity; Fabrication; Inductors; Microwave technology; Q factor; Radio frequency; Silicon; Spirals; Substrates;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.649456
