A 1V CMOS low-noise amplifier with inductive resonated for 3.1–10.6GHz UWB wireless receiver

In this paper a low power and low-noise amplifier (LNA) is designed for ultra-wideband (UWB) system. The design consists of a wideband input impedance matching network, two stages common-source amplifier with inductive resonated load and an output buffer for measurement purpose; it is fabricated in TSMC 0.18um standard RF CMOS process. The measured UWB LNA gives 12.0dB gain and 8.0GHz 3dB bandwidth (3.0 – 11.0GHz) while consuming only 7.3mW through a 1.0V supply including the buffer. Over the 3.1 – 10.6GHz frequency band, a minimum noise figure of 4.2dB and input return loss lower than −8.7dB have been achieved.