• DocumentCode
    1895637
  • Title

    Ultra-thin gate dielectrics: they break down, but do they fail?

  • Author

    Weir, B.E. ; Silverman, P.J. ; Monroe, D. ; Krisch, K.S. ; Alam, M.A. ; Alers, G.B. ; Sorsch, T.W. ; Timp, G.L. ; Baumann, F. ; Liu, C.T. ; Ma, Y. ; Hwang, D.

  • Author_Institution
    Lucent Technol., Bell Labs., Murray Hill, NJ, USA
  • fYear
    1997
  • fDate
    10-10 Dec. 1997
  • Firstpage
    73
  • Lastpage
    76
  • Abstract
    We study breakdown in high-quality 2-7 nm gate dielectrics, and find that soft breakdown becomes more likely for thinner oxides and for oxides stressed at lower voltages. For 2 nm oxides, an increase in gate noise is the only precise indication of soft breakdown. For many applications, devices should remain functional with the level of gate noise we have observed, after soft breakdown.
  • Keywords
    dielectric thin films; electric breakdown; failure analysis; failure; noise; oxide; soft breakdown; ultrathin gate dielectric; Breakdown voltage; Current density; Dielectric breakdown; Electric breakdown; Ellipsometry; Furnaces; Noise level; Testing; Thermal degradation; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-4100-7
  • Type

    conf

  • DOI
    10.1109/IEDM.1997.649463
  • Filename
    649463
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1895637