Title :
RF-microswitch on the basis of aluminum MEMS technology
Author :
Chernykh, A.G. ; Tymoshchyk, A.S. ; Baranov, I.L. ; Komar, O.M.
Author_Institution :
Belarusian State Univ. of Inf. & Radio Electron., Minsk, Belarus
Abstract :
The RF MEMS microswitch technology on the basis of aluminum and anodic aluminum oxide as the working and sacrificial layers, respectively are considered. It is shown that the use of local anodization of aluminum eliminates the need for additional procedures of sacrificial layers formation. Due to the lack of high-temperature operation the proposed technology allows creating the micromechanical systems on a single chip with the control electronics.
Keywords :
aluminium; anodisation; microswitches; Al; RF MEMS microswitch technology; anodic aluminum oxide; control electronics; high-temperature operation; local anodization; micromechanical system; sacrificial layers; sacrificial layers formation; single chip; Aluminum oxide; Electronic mail; Materials; Micromechanical devices; Microswitches; Radio frequency;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
