Title :
Characterization of various stress-induced oxide traps in MOSFET´s by using a novel transient current technique
Author :
Tahui Wang ; Chiang, L.P. ; Zous, N.K. ; Chang, T.E. ; Huang, C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A new oxide trap characterization technique by employing a two-phase subthreshold current measurement has been developed. By varing the gate bias and the drain bias in measurement, the field and temperature dependences of oxide charge detrapping and the spatial distributions of various stress induced oxide traps are characterized.
Keywords :
MOSFET; electric current measurement; electron traps; internal stresses; semiconductor device reliability; transient analysis; MOSFET; drain bias; gate bias; oxide charge detrapping; spatial distributions; stress-induced oxide traps; transient current technique; trap characterization technique; two-phase subthreshold current measurement; Charge carrier processes; Charge measurement; Current measurement; Electron traps; MOSFET circuits; Phase measurement; Stress measurement; Subthreshold current; Temperature dependence; Temperature distribution;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.649471
