Title :
Influence of Simulation Parameters on the Bipolar Amplification in Fully-Depleted SOI Technologies under Heavy-Ion Irradiations
Author :
Castellani-Coulié, K. ; Xia, M. ; Munteanu, D. ; Autran, J.L. ; Ferlet-Cavrois, V. ; Paillet, P. ; Baggio, J.
Author_Institution :
CNRS, Marseille
Abstract :
The influence of simulation key parameters on the bipolar gain of SOI FD devices under irradiation is thoroughly investigated. The values of the track characteristics radius, carrier recombination lifetime or carrier mobility injected in simulation are found to seriously modify the bipolar gain magnitude, highlighting the importance of a fine tuning of these parameters to obtain accurate results with physical sense.
Keywords :
MOSFET; amplification; bipolar transistors; carrier lifetime; electron mobility; electron-hole recombination; ion beam effects; silicon-on-insulator; Si; bipolar amplification; carrier mobility; carrier recombination lifetime; electron mobility; fully-depleted SOI MOSFET; heavy-ion irradiations; Circuit simulation; Electron mobility; Impact ionization; MOSFETs; Particle tracking; Radiation effects; Semiconductor films; Silicon; Single event upset; Space technology;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location :
Cap d´Agde
Print_ISBN :
978-0-7803-9502-2
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2005.4365607
