Title :
Characteristics of GaN nanotube MOS field-effect transistor
Author_Institution :
Zaporozhye Nat. Tech. Univ., Zaporozhye, Ukraine
Abstract :
MOS device model is designed as a semiconductor channel in which gallium nitride nanotube (GaNNT) with indices (9,0) is used. Numerical parameters of the model are as follows: channel length - 22 nm; thickness of gate insulator HfO2 - 5 nm; channel width (was considered as a circumference of the nanotube) - 2.89 nm; effective mass of electron 0.25·9.1·10-31 kg; bandgap energy - 2.16 eV. Input and output characteristics of the transistor; threshold voltage 1.03 V; trans-conductance 2.25·10-5 A/V; electronic mobility 34 cm2/(V·s) have been calculated. For calculations both step-by-step DOS and self-consistent potential of the nanotube have been used.
Keywords :
III-V semiconductors; MOSFET; gallium compounds; hafnium compounds; insulators; nanotube devices; wide band gap semiconductors; GaN-HfO2; bandgap energy; effective mass of electron; electron volt energy 2.16 eV; electronic mobility; gate insulator; nanotube MOS field-effect transistor; semiconductor channel; size 2.89 nm; size 22 nm; size 5 nm; step-by-step DOS; voltage 1.03 V; Carbon nanotubes; Gallium nitride; Integrated circuit modeling; Logic gates; MOSFET circuits; Semiconductor device modeling; Transistors;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
