• DocumentCode
    189582
  • Title

    Three-dimensional modeling and simulation of the Bosch process with the level set method

  • Author

    Xiao-Qian Li ; Zai-Fa Zhou ; Wei-Hua Li ; Qing-An Huang

  • Author_Institution
    Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China
  • fYear
    2014
  • fDate
    2-5 Nov. 2014
  • Firstpage
    570
  • Lastpage
    573
  • Abstract
    A new approach for three-dimensional (3-D) simulation of the Bosch process with arbitrarily complex mask shape is presented. Its profile evolution algorithm is based on the 3-D narrow band level set method which is memory and computation efficient and also allows easy handling of topographic changes. A series of simulations and experiments have been conducted to verify the accuracy of the simulation system. After model parameter extraction from experiments, this simulator can be used to simulate several phenomena in the Bosch process, such as the formation and adjustment of sidewall scallops, the lag and pattern transfer effects and the profile control of trench etching. The simulation results are in good agreement with experimental results and the proposed simulation system demonstrates to be high accurate and efficient.
  • Keywords
    masks; sputter etching; 3D narrow band level set method; 3D simulation; Bosch process; complex mask shape; deep reactive ion etching; lag; model parameter extraction; pattern transfer effects; profile control; profile evolution algorithm; sidewall scallops; three-dimensional modeling; three-dimensional simulation; topographic changes; trench etching; Computational modeling; Etching; Level set; Silicon; Simulation; Solid modeling; Bosch Process; Level Set Method; Modeling; Simulation; deep reactive ion etching (DRIE);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SENSORS, 2014 IEEE
  • Conference_Location
    Valencia
  • Type

    conf

  • DOI
    10.1109/ICSENS.2014.6985062
  • Filename
    6985062