Title :
GaAs FET with a sub-surface delta-doped channel
Author :
Shashkin, V.I. ; Danil´tsev, V.M. ; Demidov, E.V. ; Murel, A.V. ; Shuleshova, Irina Yu
Author_Institution :
Inst. for Phys. of Microstruct., Nizhny Novgorod, Russia
Abstract :
GaAs FET with a single sub-surface delta-doped channel is realized. The source and the drain have a tunnel ohmic contact to the channel with rather low contact resistance <;10-4 ohm cm2. A gate leakage current does not exceed 1 μA in the bias range -1.5...+0.5 V. Due to the extremely thin active region of FET, their current is very sensitive to condition of GaAs surface.
Keywords :
III-V semiconductors; contact resistance; field effect transistors; gallium arsenide; leakage currents; ohmic contacts; FET; GaAs; gate leakage current; low contact resistance; single subsurface delta-doped channel; tunnel ohmic contact; FETs; Gallium arsenide; Logic gates; MOCVD; Microstructure; Silicon;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
