Title :
Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment
Author :
Zebrev, G.I. ; Pavlov, D.Y. ; Pershenkov, V.S. ; Nikiforov, A.Y. ; Sogoyan, A.V. ; Boychenko, D.V. ; Ulimov, V.N. ; Emelyanov, V.V.
Author_Institution :
Moscow Eng. Phys. Inst., Moscow
Abstract :
A new analytical model for enhanced yield of radiation-induced charge in low-field thick oxides due to lesser recombination under low-dose-rate and high temperature conditions has been developed. Numerical simulations are quantitatively well agreed with experimental data.
Keywords :
bipolar transistors; electron-hole recombination; radiation effects; space research; bipolar transistors; electric bias; irradiation temperature; radiation induced charge; radiation response; Bipolar transistors; Charge carrier processes; Degradation; Electron emission; Electron mobility; Electron traps; Microelectronics; Physics; Spontaneous emission; Temperature; Bipolar Transistor; ELDRS; Low-dose-rate Irradiation; Model; Recombination;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location :
Cap d´Agde
Print_ISBN :
978-0-7803-9502-2
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2005.4365613
