DocumentCode :
1895916
Title :
Correlation of Electron Radiation Induced-Damage in GaAs Solar Cells
Author :
Warner, Jeffrey H. ; Messenger, Scott R. ; Walters, Robert J. ; Summers, Geoffrey P. ; Lorentzen, Justin R. ; Wilt, David M. ; Smith, Mark A.
Author_Institution :
Naval Res. Lab., Washington
fYear :
2005
fDate :
19-23 Sept. 2005
Abstract :
GaAs solar cells with different structures and polarities were irradiated with 1 and 5 MeV electrons. The energy dependence of the electron damage coefficients for the photocurrent, photovoltage, and maximum power were found to vary approximately linearly with NIEL in contrast to what has been found for other GaAs cells.
Keywords :
III-V semiconductors; electron beam effects; gallium arsenide; photoconductivity; solar cells; GaAs; electron radiation induced damage; electron volt energy 1 MeV; electron volt energy 5 MeV; nonionizing energy loss; photocurrent; photovoltage; solar cells; Degradation; Distributed control; Electrons; Energy loss; Gallium arsenide; Indium phosphide; Laboratories; Photovoltaic cells; Physics; Protons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location :
Cap d´Agde
ISSN :
0379-6566
Print_ISBN :
978-0-7803-9502-2
Electronic_ISBN :
0379-6566
Type :
conf
DOI :
10.1109/RADECS.2005.4365614
Filename :
4365614
Link To Document :
بازگشت