A high power IGBT module for traction motor drive

Author

Mori, M. ; Saitou, R. ; Yatsuo, T.

Author_Institution

Hitachi Ltd., Ibaraki, Japan

fYear

1993

fDate

18-20 May 1993

Firstpage

287

Lastpage

291

Abstract

A 2000-V, 300-A insulated-gate bipolar transistor (IGBT) module consisting of six IGBT chips and two soft-and-fast recovery diode (SFD) chips has been fabricated for the inverter of a traction motor. The module structure and chip layout were designed to provide sufficient reliability and uniform operation among chips. The main electrical characteristics which were obtained from the tradeoff relations between on-state voltages and switching losses of 2000-V chips, namely, a saturation voltage of 3.5 V, a forward voltage of 2.7 V, and a typical turn-off time of 5 μs, are well suited to driving a motor at a high frequency

Keywords

insulated gate bipolar transistors; invertors; modules; reliability; traction; 2.7 V; 2000 V; 3.5 V; 300 A; 5 mus; chip layout; electrical characteristics; forward voltage; high power IGBT module; inverter; module structure; on-state voltages; reliability; saturation voltage; soft-and-fast recovery diode; switching losses; traction motor; traction motor drive; turn-off time; Assembly; Insulated gate bipolar transistors; Inverters; Power semiconductor switches; Semiconductor diodes; Switching circuits; Switching loss; Testing; Traction motors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297139

Filename

297139