A three-phase inverter IC for AC220 V with a drastically small chip size and highly intelligent functions

Author

Sakurai, Naoki ; Nemoto, Minehiro ; Arakawa, Hidetoshi ; Sugawara, Yoshitaka

Author_Institution

Hitachi Ltd., Ibaraki, Japan

fYear

1993

fDate

18-20 May 1993

Firstpage

310

Lastpage

315

Abstract

A three-phase inverter IC for a 220-V AC line with highly intelligent functions has been fabricated using new high-voltage devices and a process which is compatible with a conventional 3-μm CMOS process. This process can greatly reduce the chip size of the IC. Components developed for this inverter IC include a lateral insulated-gate bipolar transistor (LIGBT) with a low on-state voltage, a high-speed and large SOA, and a soft and fast recovery diode (SFD) with a low forward voltage drop and good recovery characteristics. The inverter is a high-voltage power IC of the 550V/1-A class and, when supplied from the 220-V line, can control a brushless motor, using a 20-kHz PWM (pulsewidth modulation) frequency over a wide range of motor rotating speeds

Keywords

BiCMOS integrated circuits; invertors; power integrated circuits; pulse width modulation; 220 V; 3 micron; AC line; CMOS process; PWM; brushless motor; chip size; forward voltage drop; intelligent functions; lateral insulated-gate bipolar transistor; motor rotating speeds; recovery characteristics; soft and fast recovery diode; three-phase inverter IC; Bipolar integrated circuits; Brushless motors; CMOS integrated circuits; CMOS process; High speed integrated circuits; Insulated gate bipolar transistors; Insulation; Low voltage; Pulse width modulation inverters; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297144

Filename

297144