• DocumentCode
    1896144
  • Title

    The Side Effects of Sidewall Polyoxide and Spacer Bottom Oxide on the Submicron High Dielectric Spacer Ldd Mosfet´s

  • Author

    Jyh-Chyurn Guo ; Lin, P.S. ; Hsu, C.C.-H.

  • Author_Institution
    Department of EIectricaI Engineering, National Tsing-Hua University
  • fYear
    1993
  • fDate
    6-7 March 1993
  • Firstpage
    33
  • Lastpage
    34
  • Keywords
    Aerospace industry; Conductivity; Dielectric devices; Dielectric materials; Electronics industry; Etching; Industrial electronics; Numerical simulation; Silicon; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
  • Conference_Location
    Taipei, Taiwan
  • Print_ISBN
    0-7803-1225-2
  • Type

    conf

  • DOI
    10.1109/SMS.1993.664540
  • Filename
    664540
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1896144