DocumentCode :
1896144
Title :
The Side Effects of Sidewall Polyoxide and Spacer Bottom Oxide on the Submicron High Dielectric Spacer Ldd Mosfet´s
Author :
Jyh-Chyurn Guo ; Lin, P.S. ; Hsu, C.C.-H.
Author_Institution :
Department of EIectricaI Engineering, National Tsing-Hua University
fYear :
1993
fDate :
6-7 March 1993
Firstpage :
33
Lastpage :
34
Keywords :
Aerospace industry; Conductivity; Dielectric devices; Dielectric materials; Electronics industry; Etching; Industrial electronics; Numerical simulation; Silicon; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-1225-2
Type :
conf
DOI :
10.1109/SMS.1993.664540
Filename :
664540
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1896144
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