DocumentCode

1896180

Title

The Oxide-Trap-Distributed Dependence of Exponent /spl gamma/ on 1/f/sup /spl gamma// Noise in Mosfets Device

Author

Chen, H.H. ; Chen, S.L. ; Jeng Gong

Author_Institution

Department of Electrical Engineering, National Tsing Hua University, Taiwan R.O.C.

fYear

1993

fDate

6-7 March 1993

Firstpage

39

Lastpage

40

Keywords

1f noise; Electrons; FETs; Fluctuations; Interface states; MOSFET circuits; Noise measurement; Photonic band gap; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on

Conference_Location

Taipei, Taiwan

Print_ISBN

0-7803-1225-2

Type

conf

DOI

10.1109/SMS.1993.664542

Filename

664542