Title :
Model for stress in ZMR SOI obtained with spot- or line-shaped heat sources
Author :
Mertens, P.W. ; Maes, H.E.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
A model is presented that allows the calculation of the absolute value of the final stress in ZMR SOI (silicon-on-insulator) layers. Both the case of a line shaped heat source, such as a lamp heater or a graphite strip heater, and the case of a scanning focused spot shaped beam, e.g., a laser or electron beam, are described based on one common physical model. Different calculated and measured values for linear and spot heat sources are listed, and the calculated results are in agreement with experimental observations
Keywords :
heating; recrystallisation; semiconductor device models; semiconductor-insulator boundaries; stress analysis; zone melting; SOI layers; Si; ZMR; electron beam; graphite strip heater; lamp heater; laser; line-shaped heat sources; scanning focused spot shaped beam; zone melt recrystallisation; Cooling; Heating; Residual stresses; Semiconductor films; Silicon; Substrates; Temperature; Tensile stress; Thermal expansion; Thermal stresses;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162874
