Implementation and validation of a physics-based circuit model for IGCT with full temperature dependencies

Author

Wang, X. ; Caiafa, A. ; Hudgins, J.L. ; Santi, E. ; Palmer, P.R.

Author_Institution

Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA

Volume

1

fYear

2004

fDate

20-25 June 2004

Firstpage

597

Abstract

This paper presents a physics-based Fourier solution IGCT model for circuit simulation with full temperature dependencies. Besides the external electrical characteristics, the model can also provide internal physical and electrical information of the device, such as the junction temperature, and the charge distribution. The model is shown to give good agreement with experimental waveforms and accurately predicts the device behavior under changing temperatures.

Keywords

Fourier analysis; circuit simulation; commutation; power semiconductor switches; thyristors; IGCT model; charge distribution; circuit simulation; electrical characteristics; integrated gate commutated thyristor; physics-based Fourier solution; physics-based circuit model; temperature dependencies; Buffer layers; Charge carrier processes; Circuit simulation; Circuit testing; Electric variables; Equations; Power electronics; Temperature dependence; Temperature distribution; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual

ISSN

0275-9306

Print_ISBN

0-7803-8399-0

Type

conf

DOI

10.1109/PESC.2004.1355815

Filename

1355815