DocumentCode
1896456
Title
"Super" GTO\´s push the limits of thyristor physics
Author
Temple, Vic
Author_Institution
Silicon Power Corp., Watervliet, NY, USA
Volume
1
fYear
2004
fDate
20-25 June 2004
Firstpage
604
Abstract
Silicon power has developed an advanced "Super"-GTO or SGTO by adapting the processes of an IC foundry to fabricate high voltage GTO\´s. Using our patented "thinPak" technology we were able to make low impedance contact to gate and cathodes at a cell repeat of 150,000 emitter islands per cm2, generating an extraordinary improvement in switching, both turn-on and turn-off, while reducing forward drop at the same time. The thinPak package lends itself to producing low cost power modules that are fully bonded (no dry interfaces), have isolated bases and require no clamps or springs to mount to a heat sink. This paper will introduce new SGTO developments including that, taken together, promise diode-like forward drops and much higher operating frequencies in MW modules that can be paralleled and stacked in series with fewer problems than presently faced with standard GTO\´s.
Keywords
electric impedance; power semiconductor switches; semiconductor device packaging; silicon; thyristors; IC fabrication; SGTO; emitter islands; forward drop reduction; low impedance contact; silicon power; super gate turn-off devices; switching improvement; thinPak technology; thyristors; Cathodes; Costs; Foundries; Impedance; Multichip modules; Packaging; Physics; Silicon; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
ISSN
0275-9306
Print_ISBN
0-7803-8399-0
Type
conf
DOI
10.1109/PESC.2004.1355816
Filename
1355816
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