• DocumentCode
    1896456
  • Title

    "Super" GTO\´s push the limits of thyristor physics

  • Author

    Temple, Vic

  • Author_Institution
    Silicon Power Corp., Watervliet, NY, USA
  • Volume
    1
  • fYear
    2004
  • fDate
    20-25 June 2004
  • Firstpage
    604
  • Abstract
    Silicon power has developed an advanced "Super"-GTO or SGTO by adapting the processes of an IC foundry to fabricate high voltage GTO\´s. Using our patented "thinPak" technology we were able to make low impedance contact to gate and cathodes at a cell repeat of 150,000 emitter islands per cm2, generating an extraordinary improvement in switching, both turn-on and turn-off, while reducing forward drop at the same time. The thinPak package lends itself to producing low cost power modules that are fully bonded (no dry interfaces), have isolated bases and require no clamps or springs to mount to a heat sink. This paper will introduce new SGTO developments including that, taken together, promise diode-like forward drops and much higher operating frequencies in MW modules that can be paralleled and stacked in series with fewer problems than presently faced with standard GTO\´s.
  • Keywords
    electric impedance; power semiconductor switches; semiconductor device packaging; silicon; thyristors; IC fabrication; SGTO; emitter islands; forward drop reduction; low impedance contact; silicon power; super gate turn-off devices; switching improvement; thinPak technology; thyristors; Cathodes; Costs; Foundries; Impedance; Multichip modules; Packaging; Physics; Silicon; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
  • ISSN
    0275-9306
  • Print_ISBN
    0-7803-8399-0
  • Type

    conf

  • DOI
    10.1109/PESC.2004.1355816
  • Filename
    1355816