Title :
A new approach to current-DLTS in enhancement-mode MOSFET´s: application to SIMOX devices
Author :
Haddara, H. ; Elewa, M.T. ; Cristoloveanu, S.
Author_Institution :
Dept. of Electron. & Comput. Eng., Ain Shams Univ., Cairo, Egypt
Abstract :
The current-DLTS in enhancement-mode MOSFETs is an adequate and suitable technique for the characterization of deep traps in thin SOI films. An approach is proposed which improves the modeling of the transient current by including a time-dependent mobility law and provides a modified/simplified measurement technique which avoids temperature scanning. CMOS devices have been fabricated on partially-depleted SIMOX films. Measurements have been performed on five-terminal transistors in order to avoid the parasitic influence of the current overshoot
Keywords :
deep level transient spectroscopy; electron traps; hole traps; insulated gate field effect transistors; semiconductor device models; semiconductor device testing; CMOS devices; MOSFETs; SIMOX devices; Si; characterization; current-DLTS; deep traps; enhancement-mode; measurement technique; modeling; partially-depleted SIMOX films; thin SOI films; time-dependent mobility law; transient current; Application software; Electron traps; Equations; Integrated circuit modeling; Linear predictive coding; MOSFET circuits; Measurement techniques; Space vector pulse width modulation; Temperature; Threshold voltage;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162875
