DocumentCode
1896686
Title
Crystal structure and polymorphism of dimethyl-oligothiophenes crystallized epitaxially on highly oriented PTFE thin films
Author
Yang, Cary Y. ; Yang, Yi ; Hotta, Seiji
Author_Institution
UNIAX Corporation
fYear
1994
fDate
24-29 July 1994
Firstpage
335
Lastpage
335
Abstract
Summary form only given. The crystal structure of dimethyl- oligothiophenes grown by epitaxial crystallization on highly oriented PTFE thin film has been studied by transmission electron microscopy. The dimethyl-oligothiophenes crystallize principally in a monoclinic phase with common lattice parameters a,b, and /spl beta/, but different c for different numbers of thiophene rings: a=0.598nm, b=0.789nm, and /spl beta/=98/spl deg/; and c=1.866nm for tetramer, c=2.234nm for the pentamer and c=2.596nm for the hexamer. The space group is C2/m. The calculated crystallographic densities are 1.36g/cm/sup 3/, 1.39g/cm/sup 3/ and 1.40g/cm/sup 3/ for the tetramer, pentamer and hexamer respectively. Polymorphism is found, with coexistence of monoclinic and orthorhombic crystal structures. The dominant phase, however, is monoclinic. The relationship between the different phases is discussed.
Keywords
Conductivity; Crystalline materials; Crystallization; Electronics industry; Industrial electronics; Laboratories; Organic materials; Plastics industry; Polymer films; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Science and Technology of Synthetic Metals, 1994. ICSM '94. International Conference on
Conference_Location
Seoul, Korea
Type
conf
DOI
10.1109/STSM.1994.835400
Filename
835400
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