Fracture and delamination of thin multilayers on ultra-thin silicon

Author

Kravchenko, G. ; Bagdahn, J.

Author_Institution

Fraunhofer Inst. for Mech. of Mater., Halle, Germany

fYear

2005

fDate

18-20 April 2005

Firstpage

419

Lastpage

422

Abstract

The paper analyzes delamination propagation and crack kinking between CMOS layers on the ultra thin silicon chip. Based on the fracture mechanics approach, a four-point bending specimen is analyzed with the help of the finite element modelling. Using the maximum hoop stress criterion, the crack kinking as the chip fracture initiation is predicted. Influence of T-stress on the crack kinking behaviour was also considered in the analysis.

Keywords

CMOS integrated circuits; cracks; delamination; elemental semiconductors; finite element analysis; fracture mechanics; materials testing; multilayers; silicon; CMOS layer; Si; T-stress; crack kinking; delamination propagation; finite element model; four-point bending specimen; fracture mechanics; maximum hoop stress criterion; thin multilayer; ultra thin silicon chip; Delamination; Finite element methods; Microelectronics; Micromechanical devices; Nonhomogeneous media; Plastics; Semiconductor device modeling; Silicon; Stress; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005. EuroSimE 2005. Proceedings of the 6th International Conference on

Print_ISBN

0-7803-9062-8

Type

conf

DOI

10.1109/ESIME.2005.1502841

Filename

1502841