DocumentCode :
1896759
Title :
Electrical Simulation of the Vertical Insulated Base Transistor
Author :
Godignon, P. ; Flores, D. ; Hidalgo, S. ; Fernandez, J. ; Rebollo, J. ; Millan, J.
Author_Institution :
Centro Nacional de Microelectronica (CNM), Spain
fYear :
1993
fDate :
6-7 March 1993
Firstpage :
53
Lastpage :
54
Keywords :
Analytical models; Bipolar transistors; Contacts; Dielectrics and electrical insulation; Electric variables; Electron devices; Forward contracts; Insulated gate bipolar transistors; Resistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-1225-2
Type :
conf
DOI :
10.1109/SMS.1993.664550
Filename :
664550
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1896759
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