Radiation evaluation of a 0.18 μm commercial CMOS process and modified radiation hardened versions of this process

Author

Poivey, Christian ; Kim, Hak ; Forney, Jim ; LaBel, Kenneth A. ; Saigusa, Rajan ; Vilchis, Miguel ; Finlinson, Rick ; Suvkhanov, Agajan ; Hornback, Verne ; Song, Jun ; Tung, Jeffrey ; Mirabedini, Mohammad

Author_Institution

NASA Goddard Space Flight Center, Greenbelt

fYear

2005

fDate

19-23 Sept. 2005

Abstract

We present radiation data, Total Ionizing Dose and Single Event Effects, on the LSI Logic´s commercial 0.18 μm process and its radiation hardened version. Test results, are discussed in this paper. No Single Event Latch-up (SEL) was observed up to a LET of 75 MeVcm²/mg for radiation hardened version, while the commercial process was very sensitive to SEL.

Keywords

CMOS logic circuits; CMOS memory circuits; SRAM chips; ion beam effects; CMOS Process; SRAM; field programmable gate arrays; logic chip; modified radiation hardened process; single event effects; size 0.18 mum; total ionizing dose; Application specific integrated circuits; CMOS process; Ionizing radiation; Large scale integration; Logic testing; Performance evaluation; Radiation hardening; Random access memory; Vehicles; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on

Conference_Location

Cap d´Agde

ISSN

0379-6566

Print_ISBN

978-0-7803-9501-5

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2005.4365655

Filename

4365655