Title :
Radiation evaluation of a 0.18 μm commercial CMOS process and modified radiation hardened versions of this process
Author :
Poivey, Christian ; Kim, Hak ; Forney, Jim ; LaBel, Kenneth A. ; Saigusa, Rajan ; Vilchis, Miguel ; Finlinson, Rick ; Suvkhanov, Agajan ; Hornback, Verne ; Song, Jun ; Tung, Jeffrey ; Mirabedini, Mohammad
Author_Institution :
NASA Goddard Space Flight Center, Greenbelt
Abstract :
We present radiation data, Total Ionizing Dose and Single Event Effects, on the LSI Logic´s commercial 0.18 μm process and its radiation hardened version. Test results, are discussed in this paper. No Single Event Latch-up (SEL) was observed up to a LET of 75 MeVcm2/mg for radiation hardened version, while the commercial process was very sensitive to SEL.
Keywords :
CMOS logic circuits; CMOS memory circuits; SRAM chips; ion beam effects; CMOS Process; SRAM; field programmable gate arrays; logic chip; modified radiation hardened process; single event effects; size 0.18 mum; total ionizing dose; Application specific integrated circuits; CMOS process; Ionizing radiation; Large scale integration; Logic testing; Performance evaluation; Radiation hardening; Random access memory; Vehicles; Voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location :
Cap d´Agde
Print_ISBN :
978-0-7803-9501-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2005.4365655
