Interface quality of SOI MOSFET´s reflected in noise and mobility

Author

Chen, J. ; Lee, A. ; Fang, P. ; Solomon, R. ; Chan, T. ; Ko, P. ; Hu, C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1991

fDate

1-3 Oct 1991

Firstpage

100

Lastpage

101

Abstract

The trap density of both front and back interfaces of SOI (silicon-on-insulator) devices is estimated using low frequency noise measurement. The authors present the complete set of effective mobilities for both n- and p-channel SOI MOSFETs at both the front and back channels and relate them to the trap densities. It is found that the interface qualities of the front and back sides are similar in SIMOX (separation by implanted oxygen) SOI MOSFETs from the noise and mobility standpoint. The very low field effective mobility of SOI NMOS is lower than that of bulk NMOS due to increased interface trap densities for SOI devices and the effective mobility of the edge transistor is lower

Keywords

carrier mobility; electron device noise; electron traps; hole traps; insulated gate field effect transistors; NMOS; SIMOX; SOI MOSFETs; Si; back interfaces; edge transistor; effective mobilities; low frequency noise measurement; trap density; Contracts; Frequency; Low-frequency noise; MOS devices; MOSFET circuits; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162876

Filename

162876