Analysis of Quasi-monoenergetic neutron SEU cross sections for Terrestrial applications

Author

Lambert, D. ; Baggio, J. ; Hubert, G. ; Paillet, P. ; Girard, S. ; Ferlet-Cavrois, V. ; Flament, O. ; Saigné, F. ; Boch, J. ; Sagnes, B. ; Buard, N. ; Carriere, T.

Author_Institution

CEA/DAM-Ile de France, Bruyeres-le-Chatel

fYear

2005

fDate

19-23 Sept. 2005

Abstract

This paper investigates the single event upset sensitivity of bulk SRAMs to neutron and proton irradiations with energy range from 20 to 180 MeV. The technology sensitivity is analyzed with both quasi-monoenergetic neutron and proton experiments. Analytical and simulation based correction methods of the neutron cross section are presented and validated. Then, neutron and proton cross section are compared. Soft error rate with proton data and neutron data are presented.

Keywords

SRAM chips; radiation hardening (electronics); SEU cross sections; bulk SRAM; electron volt energy 20 MeV to 180 MeV; neutron irradiations; proton irradiations; quasimonoenergetic neutron; single event upset sensitivity; soft error rate; terrestrial applications; Aerospace electronics; Error analysis; Interference; Neutrons; Packaging; Particle beams; Protons; Single event upset; Tail; Testing; Bulk technologies; neutron and proton effects; single-event upset (SEU); soft error rate (SER);

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on

Conference_Location

Cap d´Agde

ISSN

0379-6566

Print_ISBN

978-0-7803-9502-2

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2005.4365660

Filename

4365660