DocumentCode
1896900
Title
Charge sharing study in the case of neutron induced SEU on 130 nm bulk SRAM modeled by 3-D Device Simulation
Author
Mérelle, T. ; Serre, S. ; Saigné, F. ; Sagnes, B. ; Gasiot, G. ; Roche, Ph. ; Carrière, T. ; Palau, M.C.
Author_Institution
Univ. de Montpellier, Montpellier
fYear
2005
fDate
19-23 Sept. 2005
Abstract
The charge sharing quantification in the case of neutron induced SEUs in a 130 nm bulk SRAM is presented. Conclusions on its contribution to the soft errors sensitivity evaluation using Monte-Carlo codes are underlined.
Keywords
Monte Carlo methods; SRAM chips; neutron effects; 3-D Device Simulation; Monte-Carlo codes; SRAM; charge sharing quantification; neutron induced soft error upset; soft errors sensitivity; Alpha particles; Analytical models; Consumer electronics; Electrons; Error analysis; Neutrons; Random access memory; Research and development; Semiconductor device reliability; Silicon; SEU; SRAM; TCAD simulations; bulk; charge sharing; diffusion; neutron;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location
Cap d´Agde
ISSN
0379-6566
Print_ISBN
978-0-7803-9502-2
Electronic_ISBN
0379-6566
Type
conf
DOI
10.1109/RADECS.2005.4365661
Filename
4365661
Link To Document