Title :
Radiation hardness characteristics of GaAs/AlGaAs heterojunction bipolar transistors
Author :
Song, Y. ; Kim, M.E. ; Oki, A.K. ; Hafizi, M.E. ; Camou, J.B. ; Kobayashi, K.W.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
The radiation hardness of 3- mu m-emitter, self-aligned-base ohmic metal GaAs/AlGaAs heterojunction bipolar transistors (GaAs HBTs) and ICs based on molecular beam epitaxy has been characterized in neutron, total-ionizing-radiation-dose, and dose-rate environments. Results based on discrete devices and digital circuits establish the baseline DC and RF hardness for neutrons at >1*10/sup 14/ n/cm/sup 2/ (E>10 keV) and for total dose at >500 Mrad (GaAs). In a dose-rate environment, the GaAs HBT does not display the long-term transient currents often observed with GaAs FETs.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; neutron effects; radiation hardening (electronics); semiconductor junctions; semiconductor technology; 3 micron; 5E8 rad; GaAs-AlGaAs; HBTs; RF hardness; characteristics; digital circuits; discrete devices; dose-rate environments; heterojunction bipolar transistors; long-term transient currents; molecular beam epitaxy; neutron environment; radiation hardness; self-aligned-base ohmic metal; semiconductors; total ionizing radiation dose environment; Circuits; Dielectric devices; FETs; Gallium arsenide; Heterojunction bipolar transistors; Ionizing radiation; Molecular beam epitaxial growth; Neutrons; Silicon; Space technology;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69316
