• DocumentCode
    1897213
  • Title

    High temperature sensing technology for applications up to 1000°C

  • Author

    da Cunha, M. Pereira ; Moonlight, Thomas ; Lad, Robert ; Frankel, David ; Bernhard, G.

  • Author_Institution
    Lab. for Surface Sci. & Technol., Univ. of Maine, Orono, ME
  • fYear
    2008
  • fDate
    26-29 Oct. 2008
  • Firstpage
    752
  • Lastpage
    755
  • Abstract
    This work reports on the research and development of high temperature (HT) thin electrodes for use in acoustic wave sensor platforms up to 1000degC. Previously developed thin film platinum (Pt) electrodes limits HT operation due to a de-wetting phenomena, which results in loss of Pt film electrical continuity and device failure above 650mnplus750degC. To address the problem, co-deposition of Pt/rhodium (Pt-Rh) alloys with zirconia (ZrO2) was used to fabricate HT-stable thin film surface acoustic wave interdigitated electrodes on langasite substrates. The resulting devices showed stable operation for over five months at 800degC. As temperature sensors, these devices have a sensitivity of 9.1 KHz/degC @800degC. In addition, ceramic silicon-alumina-nitrogen (SiAlON) overlayers were investigated to protect the sensor surface. The resulting devices enable harsh environment temperature and pressure sensors, for applications such as monitoring of jet engines, atmospheric re-entrance, and space exploration.
  • Keywords
    acoustic waves; high-temperature electronics; temperature sensors; acoustic wave sensor platforms; atmospheric reentrance; dewetting phenomena; high temperature sensing technology; high temperature thin electrodes; jet engines; pressure sensors; space exploration; temperature 650 degC to 750 degC; temperature sensors; thin film platinum electrodes limits; thin film surface acoustic wave interdigitated electrodes; Acoustic sensors; Acoustic waves; Electrodes; Platinum alloys; Research and development; Sensor phenomena and characterization; Surface acoustic wave devices; Temperature sensors; Thin film devices; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2008 IEEE
  • Conference_Location
    Lecce
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-2580-8
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2008.4716550
  • Filename
    4716550