Title :
Analysis of quantum capacitance and quantum hall effect of silicene for different fermi energy
Author :
Hasan, Md Rifat ; Hassan, Asif ; Abedin, Minhaz Ibna ; Mondol, Raktim Kumar
Author_Institution :
Khulna Univ. of Eng. & Technol., Khulna, Bangladesh
Abstract :
Silicene is a monolayer of silicon which is again an isostructure to graphene. Due to zero bandgap of graphene, it is now subsided by silicene which opens new opportunities for electrically tunable electronic devices. But before using it as a material in a device, some electronic properties have to be investigated. In silicone, the charge carrier behaves like massless Dirac fermion. For this, quantum study is very necessary and mandatory. In this paper, we will observe the quantum capacitance and the quantum hall effect for corresponding Fermi energy level for different spin coupling strength and applied electric energy.
Keywords :
Fermi level; capacitance; elemental semiconductors; energy gap; fermion systems; monolayers; quantum Hall effect; silicon; Fermi energy level; Si; applied electric energy; charge carrier; electrically tunable electronic devices; electronic properties; graphene isostructure; massless Dirac fermion; quantum Hall effect; quantum capacitance; silicene; silicon monolayer; spin coupling strength; zero band gap; Capacitance; Graphene; Fermi energy; Silicene; energy; quantum capacitance; quantum hall effect;
Conference_Titel :
Electrical, Computer and Communication Technologies (ICECCT), 2015 IEEE International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4799-6084-2
DOI :
10.1109/ICECCT.2015.7225948