DocumentCode :
1897654
Title :
Hydrogen gas sensing application of Al/NiO Schottky diode
Author :
Stamataki, M. ; Sargentis, Ch ; Tsamakis, D. ; Fasaki, I. ; Kompitsas, M.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Nat. Tech. Univ. of Athens, Athens
fYear :
2008
fDate :
26-29 Oct. 2008
Firstpage :
843
Lastpage :
846
Abstract :
Undoped p-type NiO thin film has been developed on high resistivity Si substrates by reactive pulsed laser deposition technique (RPLD). Subsequently an Al/NiO Schottky diode has been fabricated by electron gun evaporation and was functionalized as H2 gas sensor.
Keywords :
Schottky diodes; aluminium; gas sensors; hydrogen; nickel compounds; pulsed laser deposition; semiconductor materials; semiconductor thin films; silicon; vacuum deposition; Al-NiO; H2; Schottky diode; Si; electron gun evaporation; high resistivity substrates; hydrogen gas sensor; reactive pulsed laser deposition; thin film; Conductivity; Electrons; Gas lasers; Hydrogen; Optical pulses; Pulsed laser deposition; Schottky diodes; Semiconductor thin films; Sputtering; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2008 IEEE
Conference_Location :
Lecce
ISSN :
1930-0395
Print_ISBN :
978-1-4244-2580-8
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2008.4716572
Filename :
4716572
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1897654
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