DocumentCode
189778
Title
Design of stable SRAM cells based on Schmitt Trigger
Author
Rasekh, Hossein ; Sadeghi, Mohsen ; Golmakani, Abbas ; Ali, Maaruf
Author_Institution
Electrical Engineering Department Sadjad Institute for Higher Education Mashad, Iran
fYear
2014
fDate
15-19 June 2014
Firstpage
184
Lastpage
188
Abstract
The predominant concern for SRAM cell designers is stability for nano-scaled technology due to the reduction in power supply voltages. We propose two novel SRAM cells, based on the Schmitt Trigger at 65 nm feature size in CMOS. This achieves 4–5.35 times higher read static noise margin (VDD = 350 mV) compared to the conventional 6T cell design. It also provides the much desired greater enhancement in stability compared with three other reported SRAM cell designs.
Keywords
Inverters; Noise; SRAM cells; Switches; Threshold voltage; Transistors; 65 nm; CMOS; SRAM cell; Schmitt Trigger;
fLanguage
English
Publisher
ieee
Conference_Titel
Embedded Computing (MECO), 2014 3rd Mediterranean Conference on
Conference_Location
Budva, Montenegro
Print_ISBN
978-1-4799-4827-7
Type
conf
DOI
10.1109/MECO.2014.6862690
Filename
6862690
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