DocumentCode :
189778
Title :
Design of stable SRAM cells based on Schmitt Trigger
Author :
Rasekh, Hossein ; Sadeghi, Mohsen ; Golmakani, Abbas ; Ali, Maaruf
Author_Institution :
Electrical Engineering Department Sadjad Institute for Higher Education Mashad, Iran
fYear :
2014
fDate :
15-19 June 2014
Firstpage :
184
Lastpage :
188
Abstract :
The predominant concern for SRAM cell designers is stability for nano-scaled technology due to the reduction in power supply voltages. We propose two novel SRAM cells, based on the Schmitt Trigger at 65 nm feature size in CMOS. This achieves 4–5.35 times higher read static noise margin (VDD = 350 mV) compared to the conventional 6T cell design. It also provides the much desired greater enhancement in stability compared with three other reported SRAM cell designs.
Keywords :
Inverters; Noise; SRAM cells; Switches; Threshold voltage; Transistors; 65 nm; CMOS; SRAM cell; Schmitt Trigger;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Embedded Computing (MECO), 2014 3rd Mediterranean Conference on
Conference_Location :
Budva, Montenegro
Print_ISBN :
978-1-4799-4827-7
Type :
conf
DOI :
10.1109/MECO.2014.6862690
Filename :
6862690
Link To Document :
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