Title : 
Oxygen absorption effect on the sensitivity and material stability of ZnO nanostructured films
         
        
            Author : 
Khranovskyy, Volodymyr ; Eriksson, Jens ; Lloyd-Spetz, Anita ; Yakimova, Rositza
         
        
            Author_Institution : 
Dept. of Phys., Chem. & Biol., Linkoping Univ., Linkoping
         
        
        
        
        
        
            Abstract : 
In this work the effect of ambient influence on the electrical conductivity of ZnO films has been studied. Nanostructured ZnO films (undoped and Ga, Co, Mn doped) were exposed to oxygen (1-80 vol.%) at temperature range 300-500degC. A dominant effect of ambient influence via oxygen absorption was observed: the intensity of conductivity decrease was found to be proportional with temperature and tends to saturation with time. After oxygen saturation the reversible effect of oxygen adsorption became dominant and contributed to the films conductivity. Oxygen exposed undoped ZnO films revealed high sensitivity for oxygen content change in the ambience, therefore they have been further processed for gas sensor fabrication.
         
        
            Keywords : 
II-VI semiconductors; adsorption; electrical conductivity; gas sensors; nanostructured materials; oxygen; semiconductor thin films; wide band gap semiconductors; zinc compounds; O; ZnO; electrical conductivity; gas sensor fabrication; material stability; nanostructured films; oxygen absorption effect; oxygen saturation; temperature 300 degC to 500 degC; Absorption; Conducting materials; Conductive films; Conductivity; Nanostructured materials; Oxygen; Stability; Temperature distribution; Temperature sensors; Zinc oxide;
         
        
        
        
            Conference_Titel : 
Sensors, 2008 IEEE
         
        
            Conference_Location : 
Lecce
         
        
        
            Print_ISBN : 
978-1-4244-2580-8
         
        
            Electronic_ISBN : 
1930-0395
         
        
        
            DOI : 
10.1109/ICSENS.2008.4716580