DocumentCode
189785
Title
Contact resistance, stiction force, and field-assisted growth and migration in MEMS and NEMS metals
Author
Tabib-Azar, M. ; Hassan, Nazmul ; Pourzand, Hoorad ; Pai, Pradeep
Author_Institution
Electr. & Comput. Eng. Dept., Univ. of Utah, Salt Lake City, UT, USA
fYear
2014
fDate
2-5 Nov. 2014
Firstpage
974
Lastpage
977
Abstract
Contact resistance and its evolution are important parameters that determine the useful lifetime of MEMS switches. This work investigates the stiction force and evolution of contact resistance for five different metals (iridium, tungsten, nickel, ruthenium, and platinum). A Pt AFM probe was used as the counter electrode and the contact resistance over 100,000 cycles in nitrogen were recorded. Although this is small number of cycles compared to the desired 1 quadrillion cycles, it reveals a great deal about the contact quality provided that very small changes in the contact resistance are monitored and analyzed. Tungsten showed the largest increase in the contact resistance of 4% that was attributed to its surface anodic oxidation as imaged with AFM. We also used an infrared camera to monitor the contact temperature and noted a small flash of light when the probe touched the surface. Heating and the nano-plasma deposits carbonous materials on the metal contact area increasing contact resistance.
Keywords
anodisation; atomic force microscopy; contact resistance; iridium; microswitches; nanoelectromechanical devices; nickel; nitrogen; platinum; ruthenium; tungsten; AFM probe; Ir; MEMS switches; N; NEMS metals; Ni; Pt; Ru; W; carbonous materials; contact resistance; contact temperature; counter electrode; field-assisted growth; infrared camera; iridium; metal contact area; nanoplasma; nickel; nitrogen; platinum; ruthenium; stiction force; surface anodic oxidation; tungsten; Contact resistance; Force; Materials; Nickel; Resistance; Switches; MEMS/NEMS switches; contact resistance; contact temperature; resistance evolution; stiction force;
fLanguage
English
Publisher
ieee
Conference_Titel
SENSORS, 2014 IEEE
Conference_Location
Valencia
Type
conf
DOI
10.1109/ICSENS.2014.6985165
Filename
6985165
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