Title :
p-type gas sensing behaviour in high energy ion beam irradiated un-doped SnO2 thin films
Author :
Rani, Sanju ; Roy, Somnath C. ; Bhatnagar, M.C. ; Kanjilal, D.
Author_Institution :
Dept. of Phys., Indian Inst. of Technol. Delhi, New Delhi
Abstract :
We report novel p-type behaviour in undoped SnO2 thin films irradiated with 75 MeV Ni+ ion beam. Gas response of the irradiated films with NH3 (reducing) and NO2 (oxidizing) gases shows an increase and decrease in resistance respectively indicating p-type conduction that also increases with increase in ion fluence. Photoluminescence spectroscopy of the irradiated films shows strong yellow peak corresponding to interstitial oxygen ions. The observed p-type conductivity is attributed to holes generated by these interstitial oxygen ions. Presence of interstitial oxygen ions is also supported by X-ray photoelectron spectroscopy.
Keywords :
X-ray photoelectron spectra; electrical conductivity; electron traps; gas sensors; interstitials; ion beam effects; photoluminescence; semiconductor materials; semiconductor thin films; tin compounds; vacancies (crystal); SnO2; X-ray photoelectron spectroscopy; charge carriers; electron traps; electron volt energy 75 MeV; high energy ion beam irradiation; interstitial oxygen ions; oxidizing gases; p-type conductivity; p-type gas sensing behaviour; photoluminescence spectroscopy; undoped thin films; vacancy; Conductivity; Ion accelerators; Ion beams; Laboratories; Optical films; Photoluminescence; Physics; Roentgenium; Spectroscopy; Transistors;
Conference_Titel :
Sensors, 2008 IEEE
Conference_Location :
Lecce
Print_ISBN :
978-1-4244-2580-8
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2008.4716583
