Title :
In depth resolved analysis of SIMOX materials by optical characterization techniques
Author :
Pérez-Rodriguez, A. ; Martin, E. ; Samitier, J. ; Jiménez, J. ; Morante, J.R. ; Hemment, P.L.F. ; Homewood, K.P.
Author_Institution :
Dept. Fisica Aplicada i Electron., Barcelona Univ., Spain
Abstract :
Beveled SIMOX (separation by implanted oxygen) samples obtained by different processes have been analyzed by Raman scattering and Fourier transform infrared (FTIR) reflection-absorption spectroscopy techniques. In both cases, measurements have been made with a microscope, which made it possible to directly observe the different regions of the silicon and buried oxide layers on the structures. Micro-Raman measurements performed with an excitation wavelength of 457.9 nm (penetration depth of about 300 nm) show the existence of structural differences in the Si regions of the different samples, related to the technological processes. The structural characterization of the buried oxides has been carried out by infrared (IR) microscope reflection measurements. A comparison of the characteristics of the TO3-LO3 and TO4-LO4 vibrational peaks in the IR spectra gives information about the structural characteristics of the oxides
Keywords :
Fourier transform spectroscopy; infrared spectra of inorganic solids; infrared spectroscopy; nondestructive testing; optical microscopy; semiconductor-insulator boundaries; 300 nm; 457.9 nm; FTIR; Fourier transform infrared; IR microscope reflection measurements; IR spectra; NDT; Raman scattering; SIMOX materials; TO3-LO3 vibration peaks; TO4-LO4 vibrational peaks; buried oxide layers; buried oxides; depth resolved analysis; excitation wavelength; optical characterization techniques; penetration depth; reflection-absorption spectroscopy; structural characterization; structural differences; technological processes; Fourier transforms; Infrared spectra; Microscopy; Optical materials; Optical scattering; Performance evaluation; Raman scattering; Silicon; Spectroscopy; Wavelength measurement;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162881
