Title :
Monolithic pin photodetector and FT amplifier on GaAs-on-Si
Author :
Subbarao, S.N. ; Bechtle, D. ; Menna, R. ; Connolly, J. ; Camisa, R.L. ; Narayan, S.Y.
Author_Institution :
David Smirnoff Res. Center, Princeton, NJ, USA
Abstract :
The design, fabrication, and evaluation of GaAs-on-Si monolithic, lateral p-i-n photodetectors and MESFET amplifiers are described. The GaAs-on-Si was grown by OMCVD. The low-capacitance p-i-n detectors were fabricated directly on the GaAs high-resistivity buffer layer in a monolithic microwave integrated circuit (MMIC)-compatible process. Quantum efficiency results for the p-i-n detector and the 2- to 4-GHz frequency response of one- and two-stage p-i-n/FET preamplifiers are presented.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; gallium arsenide; integrated circuit technology; p-i-n diodes; photodiodes; preamplifiers; semiconductor junctions; 2 to 4 GHz; GaAs high-resistivity buffer layer; GaAs-Si; GaAs-on-Si; MESFET amplifiers; MMIC; OMCVD; design; evaluation; fabrication; lateral p-i-n photodetectors; low-capacitance p-i-n detectors; monolithic microwave integrated circuit; monolithic p-i-n/FET preamplifiers; p-i-n/FET preamplifiers; quantum efficiency; semiconductors; Buffer layers; Detectors; Fabrication; Gallium arsenide; MESFETs; MMICs; Microwave FET integrated circuits; Microwave integrated circuits; PIN photodiodes; Photodetectors;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69317
