Evaluation of Secco etch technique for determination of dislocation densities in SIMOX wafers

Author

Cortesi, E. ; El-Ghor, M.K. ; Hosack, H.H. ; Allen, L.P. ; Roitman, P. ; Krause, S.J.

Author_Institution

Spire Corp., Bedford, MA, USA

fYear

1991

fDate

1-3 Oct 1991

Firstpage

118

Lastpage

119

Abstract

The authors report on an extensive study of a Secco etch process for determining dislocation densities that was performed by three different groups using nine SIMOX (separation by implanted oxygen) wafers from the same lot. The average dislocation density across the entire current data set (except transmission electron microscopy, TEM) is 2.2×10⁶/cm² with a standard deviation of 1.0×10⁶/cm². Most of the data points are in the low 10⁶ dislocations/cm² range, in agreement with the TEM results, and indicate good consistency of results from facility to facility

Keywords

dislocation density; semiconductor technology; semiconductor-insulator boundaries; transmission electron microscope examination of materials; SIMOX wafers; Secco etch process; Secco etch technique; Si-SiO₂; TEM results; consistency of results; dislocation density determination; interfacility consistency; Anisotropic magnetoresistance; Area measurement; Density measurement; Etching; Instruments; Manufacturing; NIST; Oxygen; Scanning electron microscopy; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162885

Filename

162885