DocumentCode
189852
Title
Circuit models for non-faradaic CMOS electrochemical sensing
Author
Gordon, Philip H. ; Jayant, Krishna ; Yingqui Cao ; Auluck, Kshitij ; Phelps, Joshua ; Kan, Edwin C.
Author_Institution
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fYear
2014
fDate
2-5 Nov. 2014
Firstpage
1107
Lastpage
1110
Abstract
To improve field use of ISFET devices for biological and chemical sensing, we present a parameter extraction model based on the correlation between multiple experiments in polyelectrolyte media. By correlating the quasistatic transconductance, impedance spectroscopy, transient current readout and capacitance-voltage (CV) measurements, we can decouple the physical contributions of the immobile/diffusive layer composition, overall solution resistance, surface potential drift under various electrolytic molarities, and reference electrode configurations. Hierarchical parameter extraction of the circuit components is demonstrated for mixtures of NaCl and MgCl2. This method also sheds light the dynamics of double-layer competition and correlation, which is critical for biological and biochemical sensing.
Keywords
CMOS integrated circuits; capacitance measurement; electrochemical electrodes; electrochemical sensors; electrolysis; integrated circuit modelling; ion sensitive field effect transistors; polymer electrolytes; voltage measurement; CV measurement; ISFET device; biological sensing; capacitance-voltage measurement; electrolytic molarity; immobile-diffusive layer composition; impedance spectroscopy; nonfaradaic CMOS electrochemical sensing; parameter extraction model; polyelectrolyte media; quasistatic transconductance; reference electrode configuration; surface potential drift; transient current readout; Biological system modeling; Capacitance; Electrodes; Impedance; Integrated circuit modeling; Sensors; Surface impedance; Double-Layer; Extended Gate; ISFET; Impedance Spectroscopy; Modeling; Polyelectrolyte;
fLanguage
English
Publisher
ieee
Conference_Titel
SENSORS, 2014 IEEE
Conference_Location
Valencia
Type
conf
DOI
10.1109/ICSENS.2014.6985199
Filename
6985199
Link To Document