Title :
SIMOX-devices for analog circuits
Author :
Badenes, G. ; Burbach, G. ; Gassel, H. ; Vogt, H.
Author_Institution :
Fraunhofer-Inst. of Microelectron. Circuits & Syst., Duisburg, Germany
Abstract :
It is noted that, in order to run analog circuits on SIMOX (separation by implanted oxygen), care has to be taken concerning the kink-effect, the BJT (bipolar junction transistor) breakdown, the single-transistor latch, and, for some applications, the noise of the devices. The authors report results of the different approaches to deal with these items. The demonstrator for an analog circuit is an operational amplifier, which is used as a basic element of a switch capacitor circuit. The influence of LDD (lightly doped drain) structures and low doped drift regions at the drain contact on the devices was investigated. Lateral DMOS-FETs have been examined. The device and the circuits have been tested in an elevated temperature range above 100°C
Keywords :
CMOS integrated circuits; insulated gate field effect transistors; linear integrated circuits; operational amplifiers; semiconductor-insulator boundaries; 100 C; CMOS; LDD; SIMOX-devices; Si-SiO2; analog circuits; elevated temperature range; kink-effect; lateral DMOS FETs; low doped drift regions; operational amplifier; single-transistor latch; switch capacitor circuit; Analog circuits; Bipolar transistor circuits; Circuit noise; Circuit testing; Electric breakdown; Latches; Operational amplifiers; Switched capacitor circuits; Switches; Switching circuits;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162910
